The XP131A1715SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy The small SOP-8 package makes high density mounting possible.
The XP131A1715SR is an N‑channel power MOSFET offering low on‑state resistance and ultra‑high‑speed switching, suitable for notebook PCs, portable phones, on‑board power supplies, and Li‑ion battery systems. It is supplied in a compact SOP‑8 package for high‑density mounting.
The document provides detailed electrical, thermal, and switching characteristics, including maximum voltage and current ratings, capacitances, on‑state resistance values, and timing parameters, as well as typical performance curves and safety notes.
| Drain‑Source Voltage (Vdss) | 20 V |
|---|---|
| Gate‑Source Voltage (Vgss) | ±8 V |
| Continuous Drain Current (Id) | 10 A |
| Pulse Drain Current (Idp) | 40 A |
| On‑State Resistance (Rds(on)) at Vgs=4.5 V | 0.012 Ω |
| Input Capacitance (Ciss) | 2000 pF |
| Output Capacitance (Coss) | 1000 pF |
| Turn‑On Delay Time (td(on)) | 15 ns |
| Rise Time (tr) | 25 ns |
The MOSFET can withstand up to 20 V between drain and source.
It is supplied in an SOP‑8 surface‑mount package.
The typical Rds(on) is 0.012 Ω when Vgs is 4.5 V.
Ciss is 2000 pF and Coss is 1000 pF.