The XP131A1145SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. It is ideal for applications such as notebooks, phones, power supplies, and Li-ion battery systems.
The XP131A1145SR is an N‑channel power MOSFET with low on‑state resistance and ultra‑high‑speed switching. It is supplied in a small SOP‑8 package, enabling high‑density mounting. The datasheet lists key electrical characteristics such as a 30 V drain‑source rating, 7 A continuous drain current, and a typical on‑resistance of 0.03 Ω at Vgs = 10 V.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems. The document also provides absolute maximum ratings, thermal resistance, capacitance values, and switching timing parameters to aid designers in selecting the device for power‑management circuits.
| Drain-Source Voltage (Vdss) | 30 V |
|---|---|
| Gate-Source Voltage (Vgss) | ±20 V |
| Continuous Drain Current (Id) | 7 A |
| Pulse Drain Current (Idp) | 30 A |
| On‑State Resistance (Rds(on)) at Vgs=10 V | 0.03 Ω |
| On‑State Resistance (Rds(on)) at Vgs=4.5 V | 0.045 Ω |
| Input Capacitance (Ciss) | 620 pF |
| Turn‑on Delay Time (td(on)) | 15 ns |
| Package | SOP‑8 |
The device is rated for a maximum drain‑source voltage of 30 V.
It is supplied in a small SOP‑8 package.
Typical applications include notebook PCs, cellular and portable phones, on‑board power supplies, and Li‑ion battery systems.
The typical on‑state resistance is 0.03 Ω when Vgs is 10 V.