XBP06V1E4MR-G is a TVS diode from Shott. Its maximum reverse current is 2.5 μA, maximum reverse voltage is 7.2 V, and maximum peak power is 250 W.
The XBPO6V1E4MR-G is a transient voltage suppressor (TVS) diode offered in a SOT‑25 package with a common anode configuration. It is designed for high‑ESD protection and includes specifications such as peak pulse power, breakdown voltage, and leakage current.
The datasheet includes absolute maximum ratings, typical performance curves, packaging information, and compliance notes (halogen‑ and antimony‑free, RoHS compliant). It also provides measurement conditions and thermal resistance data for board‑mounted applications.
| Peak Pulse Power (Ppk) | 200 W |
|---|---|
| Power Dissipation (Pd) | 750 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range (Tstg) | -55~+150 °C |
| ESD Durability | 30 kV |
| Breakdown Voltage (typical, 1 mA) | 6.65 V |
| Leakage Current (at 5.25 V) | 2.5 µA |
| Forward Voltage (200 mA) | 1.25 V |
| Inter‑Terminal Capacity (1 MHz, 0 V) | 170 pF |
| Package | SOT‑25 |
| Order Unit | 3,000/Reel |
| RoHS Compliance | Halogen‑ and antimony‑free |
The device can handle a peak pulse power of 200 W.
It can be stored from –55 °C up to +150 °C.
Yes, it is halogen‑ and antimony‑free and fully RoHS compliant.
The typical breakdown voltage is 6.65 V at a test current of 1 mA.