This document describes the packaging information, parameters, characteristics, and applications of the 1/3 XBS013S1CR-G Schottky Barrier Diode. The product features low current rectification.
The XBS013S1CR-G is a low‑current Schottky barrier diode offered by Torex Semiconductor Ltd. It is supplied in an ultra‑small USP‑2B02 package and is RoHS‑compliant, halogen‑ and antimony‑free. The datasheet provides the diode's electrical parameters, mechanical limits, and recommended usage guidelines.
Key specifications include a typical forward voltage of 0.71 V at 100 mA, a repetitive peak voltage of 30 V, and a maximum junction temperature of 125 °C. The device is suitable for low‑current rectification applications, and users are advised to avoid mechanical stress during mounting to prevent damage.
| Forward Voltage (V_F) at I_F=100 mA (typical) | 0.71 V |
|---|---|
| Repetitive Peak Voltage (V_RM) | 30 V |
| Reverse Voltage (DC) (V_R) | 30 V |
| Forward Current (Average) (I_F(AV)) | 100 mA |
| Junction Temperature (Tj) Maximum | 125 °C |
| Storage Temperature Range | -55 °C to +125 °C |
The “-G” suffix indicates that the product is halogen‑ and antimony‑free and fully RoHS compliant.
Keep the device away from mechanical stress during and after mounting, and avoid mounting it close to board break lines or fixed with screws that could cause board deformation.
The diode is rated for a forward current of 100 mA (average) and a peak surge current of 0.6 A.