This document describes the features and characteristics of the XBS013S16R-G Schottky Barrier Diode, including parameters such as forward voltage, reverse current, inter-terminal capacity, and reverse recovery time.
This datasheet provides the electrical specifications, absolute maximum ratings, and packaging information for the XBS013S16R-G Schottky barrier diode. It includes forward voltage, reverse voltage, current ratings, temperature limits, and typical performance curves.
The diode is designed for low‑current rectification applications and is halogen‑ and antimony‑free, meeting EU RoHS requirements. The document also contains marking rules, application notes, and legal disclaimer information. This manual is written in Chinese.
| Forward Voltage (typical, IF=100 mA) | 0.71 V |
|---|---|
| Repetitive Peak Reverse Voltage (VRM) | 30 V |
| Forward Current (average) | 100 mA |
| Reverse Current (IR, VR=25 V) | 2 µA |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Package Type | SOD‑723 |
The diode is rated for a repetitive peak reverse voltage of 30 V.
Yes, it is halogen‑ and antimony‑free and meets EU RoHS requirements.