XBS013R1DR-G Schottky Barrier Diode, 100mA, 30V Type. This product has ultra low IR, USP-2B01 ultra small package, suitable for low current rectification.
The XBS013R1DR-G is a low‑current Schottky barrier diode offered in an ultra‑small 0603 surface‑mount package (USP‑2B01). It is halogen‑ and antimony‑free and fully RoHS compliant, making it suitable for environmentally sensitive designs. The device features a fixed orientation in its embossed tape pocket and requires careful handling to avoid mechanical stress during mounting.
Key electrical characteristics include a typical forward voltage of 0.46 V at 10 mA, a reverse current of 0.3 µA at 10 V, and an average forward current rating of 100 mA with a surge capability of 0.5 A. The diode can withstand a repetitive peak voltage of 30 V and operates within a storage temperature range of –40 °C to +150 °C. Detailed performance graphs and legal usage notes are provided in the datasheet.
| Forward Voltage (V_F) at I_F=10 mA (typ) | 0.46 V |
|---|---|
| Reverse Current (I_R) at V_R=10 V (typ) | 0.3 µA |
| Repetitive Peak Voltage (V_RM) | 30 V |
| Reverse Voltage (DC) (V_R) | 30 V |
| Forward Current (Average) (I_F(AV)) | 100 mA |
| Peak Forward Surge Current (I_FSM) | 0.5 A |
| Junction Temperature (T_j) | 150 °C |
The diode is rated for an average forward current of 100 mA.