XBP06V4E4GR-G is an ESD protection device produced by ROHM, Japan. Its rated maximum reverse voltage is 7.2V, maximum reverse current is 1.0uA, maximum peak power is 70W, and maximum power dissipation is 1000mW.
The XBP06V4E4GR-G is a four‑element TVS diode in a USP‑4 package with a common anode. It offers high ESD protection and is RoHS compliant, being halogen‑ and antimony‑free.
The document lists absolute maximum ratings, detailed electrical characteristics, typical performance graphs, and packaging information, including power‑dissipation data for board‑mount conditions.
| Peak Pulse Power | 70 W |
|---|---|
| Junction Temperature (Tj) max | 150 °C |
| Storage Temperature range | -55 °C to +150 °C |
| ESD Contact Discharge Voltage | 30 kV |
| Breakdown Voltage (V_BR) | 6.4 V – 7.2 V (typical 6.8 V) |
| Leakage Current (I_R) at 5 V | ≤ 1.0 µA |
| Forward Voltage (V_F) at 10 mA | 1.25 V |
| Inter‑Terminal Capacitance | ≤ 40 pF (1 MHz) |
The device can operate up to a junction temperature of 150 °C.
It can withstand a contact discharge of up to 30 kV.
The breakdown voltage is specified between 6.4 V and 7.2 V, with a typical value of 6.8 V.
Yes, the “‑G” suffix indicates the product is halogen‑ and antimony‑free and fully RoHS compliant.