The document describes the features and characteristics of the XBS053V13R-G Schottky Barrier Diode, such as forward voltage, reverse current, reverse recovery time, etc.
This datasheet describes the XBS053V13R-G Schottky Barrier Diode, a 500 mA, 30 V device offered in a RoHS‑compliant SOD‑323A package. It includes packaging information, electrical ratings, and typical performance curves for forward voltage, reverse current, and temperature behavior.
Key specifications include a typical forward voltage of 0.40 V at 500 mA, a reverse voltage rating of 20 V (30 V peak), and a junction temperature limit of 125 °C. The diode is halogen‑ and antimony‑free, making it suitable for environmentally sensitive applications such as rectification and reverse‑polarity protection.
| Repetitive Peak Voltage (VRM) | 30 V |
|---|---|
| Forward Current (Average) | 500 mA |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Reverse Current (20 V) | 100 µA |
| Inter‑Terminal Capacity (10 V, 1 MHz) | 12 pF |
Yes, the “-G” suffix indicates the device is halogen‑ and antimony‑free and fully RoHS compliant.
The diode can be stored from –55 °C up to +150 °C.