Industrial

2SA1194(K) is a silicon PNP epitaxial transistor produced by Hitachi. It has high gain characteristics and can be used in high gain amplifiers.

This document describes the features and characteristics of the 2SA1194(K) silicon PNP epitaxial high gain amplifier.

2SA1193(K) is a silicon PNP-type NPN transistor produced by Hitachi. It features high gain and is suitable for high gain amplifiers.

This document describes the features and characteristics of the 2SA1193(K) Silicon PNP Epitaxial Darlington Application High Gain Amplifier.

2SA1190, 2SA1191 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers, and they are complementary pairs with 2SC2855 and 2SC2856.

2SA1190, 2SA1191 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers, and can be used as complementary pairs with 2SC2855 and 2SC2856.

2SA1188 and 2SA1189 are silicon PNP transistors, used in low frequency amplifiers, as complementary pairs with 2SC2853 and 2SC2854.

2SA1188, 2SA1189 are silicon PNP type transistors, which are used for low frequency amplifiers and are complementary to 2SC2853 and 2SC2854.

2SA1186 is a silicon PNP epitaxial planar transistor. It is used in audio and general purpose applications. The absolute maximum ratings are VCBO = -150 V, VCEO = -150 V, VEBO = -5 V, IC = -10 A, IB = -20 mA, and PC = -2 W. The electrical characteristics include hFE = 50 min, VCE(sat) = 4.0 V, fT = 110 MHz, and COB = 1.8 pF. The typical switching characteristics (common emitter) are ton = 0.25 µs, tstg = 0.8 µs, and tf = 0.2 µs. The external dimensions are MT-100 (TO3P). The weight is approximately 6.0 g.

2SA1179N / 2SC2812N is a low power PNP / NPN type silicon crystal transistor produced by Sanyo Electric. Features are small packaging, suitable for miniaturization and thinness.