The 2SA1175 is a PNP silicon transistor intended for use in the driver stage of AF amplifiers. It offers high gain and excellent linearity, and is complementary to the NEC 2SC2785 NPN transistor.
The document lists absolute maximum ratings, electrical characteristics such as voltage limits and current limits, and typical performance curves including power dissipation, gain‑bandwidth product, and normalized h‑parameters.
| Collector to Base Voltage (Vcbo) | -60 V |
|---|---|
| Collector to Emitter Voltage (Vceo) | -50 V |
| Emitter to Base Voltage (Veb) | ~6.0 V |
| Base Current (Ib) | -20 mA |
| Collector Current (Ic) | -100 mA |
| DC Current Gain (hFE) | 110 min / 200 typ / 600 max |
| Noise Figure | 6.0 dB min / 20 dB max |
| Gain Bandwidth Product | 50 MHz min / 180 MHz max |
The maximum collector current is -100 mA.
The typical DC current gain is 200.
The maximum collector‑emitter voltage is -50 V.