2SA1179N / 2SC2812N is a low power PNP / NPN type silicon crystal transistor produced by Sanyo Electric. Features are small packaging, suitable for miniaturization and thinness.
This document provides the electrical specifications and absolute maximum ratings for Sanyo's 2SA1179N NPN and 2SC2812N PNP transistors. It includes collector‑base breakdown voltage, collector‑emitter voltage, current limits, power dissipation, gain‑bandwidth product, and package dimensions.
The datasheet also contains safety notices, storage temperature limits, and a disclaimer that the listed parameters apply only to the individual semiconductor devices and not to end‑product performance. Users are advised to perform appropriate testing and design safeguards for critical applications. This manual is written in Japanese.
| Collector‑Base breakdown voltage VcBO | -55 V |
|---|---|
| Collector‑Emitter voltage VCEO | -50 V |
| Emitter‑Base voltage VEB0 | -5 V |
| Collector current IC (continuous) | 150 mA |
| Collector current ICP (pulse) | 300 mA |
| Base current IB | 30 mA |
| Power dissipation Pc | 200 mW |
| Maximum junction temperature Tj | 150 °C |
| Storage temperature range Tstg | -55 °C to +150 °C |
| Gain‑bandwidth product fT (2SC2812N) | 100 MHz |
| Output capacitance Cob | 3.0 pF |
The collector‑emitter voltage rating is 50 V.
The continuous collector current is limited to 150 mA, and the pulse collector current can reach 300 mA.
The devices may be stored from –55 °C up to +150 °C.