The 2SA1177 is a PNP epitaxial planar silicon transistor designed for high‑frequency RF applications. It is ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers.
The datasheet lists key specifications such as a typical gain‑bandwidth product of 230 MHz, a small noise figure of 2.5 dB, and low junction capacitances. Absolute maximum ratings include a collector‑to‑base voltage of –30 V, collector‑to‑emitter voltage of –20 V, and a collector current limit of 30 mA. Package dimensions and recommended application circuits are also provided.
| Collector‑to‑Base Voltage (V_CBO) | -30 V |
|---|---|
| Collector‑to‑Emitter Voltage (V_CEO) | -20 V |
| Emitter‑to‑Base Voltage (V_EBO) | <5 V |
| Collector Current (I_C) | -30 mA |
| Collector Dissipation (P_C) | 150 mW |
| Junction Temperature (T_J) | 125 °C |
| Storage Temperature (T_stg) | -55 to +125 °C |
| Typical Gain‑Bandwidth Product (f_T) | 230 MHz |
| Typical Noise Figure (NF) | 2.5 dB |
It is ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers.
The maximum collector current rating is 30 mA.
The typical gain‑bandwidth product is 230 MHz.