Industrial

This document introduces a transistor model 2SC2632, which is a silicon NPN epitaxial planar transistor suitable for low-frequency high breakdown voltage amplification. It features satisfactory linearity of forward current transfer ratio hFE, high collector to emitter voltage VCEO, and small collector output capacitance Cob.

2SA1123 is a NPN silicon transistor produced by Toshiba of Japan. It is suitable for low-frequency high breakdown voltage amplification and is the complementary tube of 2SC2631. It has good forward current transfer ratio hFE, collector current IC characteristics, high collector to emitter voltage VCEO, small collector output capacitance Cob and other characteristics.

The 2SA1122 is a low frequency amplifier produced by NXP. Its maximum collector voltage is -55V, its maximum collector-emitter voltage is -55V, its maximum emitter-base voltage is -5V, its maximum collector current is -100mA, its maximum collector power dissipation is 150mW, its junction temperature is 150 °C, and its storage temperature is -55 to +150 °C.

The document introduces the 2SA1121 Silicon PNP Epitaxial application, which is a low-frequency amplifier and complementary pair with 2SC2618. The document provides detailed information on the absolute maximum ratings and electrical characteristics of the 2SA1121.

2SA1106 is a PNP structure silicon transistor, which is often used in audio power amplifiers and DC/DC converters.

This document describes the features and characteristics of 2SA1105 PNP planar silicon transistor, including high current capability, high power dissipation, and complementary to 2SC2577. It also provides the absolute maximum ratings and electrical characteristics.

This document describes a silicon PNP high frequency, high power transistor primarily used for audio and general purpose. It has a high collector-emitter voltage peak value and collector-emitter saturation voltage, making it suitable for high power applications.

2SA1102 is a PNP type silicon transistor with high current and power dissipation capabilities, and is complementary to 2SC2577.

2SC2497, 2SC2497A is a NPN power transistor from Panasonic. It is mainly used for low-frequency power amplification. Its features are high collector-emitter voltage VCEO and TO-126B package which requires no insulation plate for installation to the heat sink.