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This document describes the features and characteristics of ROHM's RUM002N05 product, including high speed switching, small package, and low voltage drive.
RUR040N02 is a 1.5V drive N-channel MOSFET. It features low on-resistance, built-in G-S protection diode and small surface mount package (TSMT3). It is suitable for switching applications.
RUU002N05 is a N-channel MOSFET from ROHM. It features high switching speed, small package and low drive voltage. It is suitable for switching applications.
1.5V Drive Pch MOSFET RW1A013ZP is a silicon P-channel MOSFET produced by ROHM. It has the characteristics of low on-resistance, high power package and low voltage drive. It is suitable for inner circuit switching.
The RW1A020ZP is a low on-resistance, high power package, low voltage drive (1.5V) silicon P-channel MOSFET from ROHM. It is suitable for inner circuit switching applications.
1.5V Drive Pch MOSFET RW1A025AP is a low voltage drive p-channel mosfet produced by rohm company, with the characteristics of low on-resistance, small size and low voltage drive
RW1A030AP is a low voltage drive P-channel MOSFET device produced by ROHM. It is suitable for switching applications. The main features include low on-resistance, small high power package, and low voltage drive.
This datasheet is about ROHM's RW1C015UN Nch MOSFET. This MOSFET has low-voltage drive characteristics, with a rated maximum voltage of 20V, a maximum current of 1.5A, and a maximum power dissipation of 3W.
RW1C020UN is a N-channel MOSFET produced by ROHM company. It features low on-resistance, built-in G-S protection diode, space saving, small surface mount package and low voltage drive.
RW1E015RP is a 4V drive Pch MOSFET produced by ROHM company. It features low on-resistance, space saving, high power package, low voltage drive, etc. It is mainly used in switching power supplies and other fields.
RW1E025RP is a P-channel MOSFET with low on-resistance, small high power package, and low drive voltage (4V). It is suitable for switching applications.
