Industrial

This document introduces a N-channel ultra-low on-resistance power MOSFET device named HUF75631SK8. It features a simulation model with ultra-low on-resistance and temperature compensation, as well as simulation and thermal impedance models. The device has a peak current of 5.5A and a drain-to-source voltage of 100V.

The HUF75631P3, HUF75631S3ST 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs have ultra low on-resistance, temperature compensated PSPICE® and SABER™ electrical models, Spice and SABER thermal impedance models.

Intersil Corporation provides a data sheet for 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET

This document introduces a product called HUF75631P3, which is a N-channel power MOSFET with ultra-low on-resistance. The product features ultra-low on-resistance and high performance, making it suitable for various applications.

HUF75623P3, HUF75623S3ST are 22A, 100V, 0.064 Ohm, N-Channel, UltraFET® Power MOSFETs products produced by Fairchild Semiconductor Corporation. They have an ultra low on-resistance (rDS(ON) = 0.064Ω, VGS = 10V) and can be used in various circuit designs.

HUF75623P3 is a 22A, 100V, 0.064 Ohm N-channel UltraFET power MOSFET from Intersil Corporation. It features an ultra-low on-resistance and can be used in a variety of power electronic applications.

This document describes the features of Fairchild Semiconductor Corporation's HUF75617D3 and HUF75617D3S UltraFET® Power MOSFETs, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, UIS rating curve, etc.

HUF75545P3, HUF75545S3, HUF75545S3S 75A, 80V, 0.010 Ohm, N-Channel, UltraFET® Power MOSFET Features: Ultra Low On-Resistance - rDS(ON) = 0.010Ω, VGS = 10V

This is the datasheet of Intersil HUF75545P3, HUF75545S3S 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET.

HUF75542P3, HUF75542S3S 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs is a low on-resistance N-Channel power MOSFET from Intersil. It features ultra-low switching losses, high current and high voltage capability.

DB 15-005 ~ DB 15-16 are three-phase Si bridge rectifiers produced by Siemens, with a rated current of 15 A and a weight of about 21 g.

This document describes the features and characteristics of the HUF75531SK8 product from Fairchild Semiconductor Corporation, including ultra-low on-resistance, temperature-compensated electrical models, pulse width curve, and UIS rating curve.

This document introduces a product named HUF75531SK8, which is a 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET. The product features ultra-low on-resistance, temperature-compensated PSPICE and SABER electrical models, as well as Spice and SABER thermal impedance models. The document also includes packaging symbols, peak current vs pulse width curve, and UIS rating curve of the product.

ZL490xx is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-end signalling.

This document introduces the HUF75345G3, HUF75345P3, HUF75345S3S N-Channel UltraFET power MOSFETs manufactured by Fairchild Semiconductor Corporation in 2005. These products are produced using the innovative UltraFET process, which achieves the lowest possible on-resistance per silicon area and provides outstanding performance. The MOSFETs can withstand high energy in the avalanche mode and have very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.