Industrial

This document describes the HUF75321D3 and HUF75321D3S, which are N-Channel power MOSFETs with a current rating of 20A and a voltage rating of 55V. These MOSFETs are manufactured using the UltraFET™ process, which results in the lowest possible on-resistance per silicon area and excellent performance. They can withstand high energy in avalanche mode and have a diode with low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

The document describes the features and characteristics of the HUF75309T3ST model, which is an N-Channel power MOSFET device. This device is manufactured using the innovative UltraFET process, resulting in low on-resistance, high energy capability, and low reverse recovery time. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

This document describes the features and characteristics of HUF75309P3, HUF75309D3, and HUF75309D3S, which are N-Channel UltraFET power MOSFET devices. These devices are manufactured using the innovative UltraFET process, which achieves low on-resistance and outstanding performance. They can withstand high energy in avalanche mode, and the diode exhibits low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

This document describes an N-channel UltraFET power MOSFET, which is manufactured using the innovative UltraFET™ process. The device offers outstanding performance with low on-resistance and low reverse recovery time, making it suitable for applications where power efficiency is important.

HUF75307P3, HUF75307D3, HUF75307D3S 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.

This is a Intersil HUF75229P3 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET, which is manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

This document is provided by ICminer.com Electronic-Library Service. It describes the features and characteristics of a product.

256K MPS µPort Saver EEPROM is a high-performance EEPROM launched by Xicor. It features 25ns read time, 10MHz data transfer rate, low power consumption and small package.

The X5043, X5045 is a 4K, 512 x 8 Bit CPU Supervisor with 4K SPI EEPROM produced by Intersil. It has functions such as Power-on Reset Control, Watchdog Timer, Supply Voltage Supervision, and Block Lock Protect Serial EEPROM Memory.

X24C00 is a 128 bit serial E2PROM from Xicor, internally organized as 16 x 8. The device features a serial interface and software protocol allowing operation on a simple two wire bus. Xicor E2PROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years. The X24C00 is fabricated with Xicor's Advanced CMOS Floating Gate technology.

This document introduces the features and characteristics of White Electronic Designs WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD.

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The W91560DN series ICs are Si-gate CMOS ICs that provide the signals needed for either pulse or tone dialing. They feature 3 number memories and a 12/16-digit LCD driver for displaying telephone numbers and calling time. A real time clock is included to display the time of day. The W91560DN series is fabricated using CMOS technology and thus provide good performance in low voltage, low power applications.