Intersil Corporation provides a data sheet for 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET
This datasheet provides specifications for the Intersil HUF75631P3 and HUF75631S3S, which are 33A continuous drain current N-Channel UltraFET Power MOSFETs. The devices feature an ultra-low on-resistance of 0.040 Ohms and a drain-to-source breakdown voltage of 100V.
| Continuous Drain Current (25°C) | 33 A |
|---|---|
| On-Resistance (Typical) | 0.040 Ohm |
| Power Dissipation | 120 W |
| Operating Temperature Range | -55 to 175 °C |
The maximum power dissipation for the HUF75631P3 and HUF75631S3S is 120 W.
The MOSFET can operate and be stored within a temperature range of -55 to 175°C.