This document introduces the HUF75345G3, HUF75345P3, HUF75345S3S N-Channel UltraFET power MOSFETs manufactured by Fairchild Semiconductor Corporation in 2005. These products are produced using the innovative UltraFET process, which achieves the lowest possible on-resistance per silicon area and provides outstanding performance. The MOSFETs can withstand high energy in the avalanche mode and have very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
The document describes a series of N-Channel power MOSFETs manufactured using the innovative UltraFET process. These devices are designed for applications requiring high power efficiency, such as switching regulators, motor drivers, and low-voltage bus switches. The datasheet covers three specific part numbers: HUF75345G3 (TO-247), HUF75345P3 (TO-220AB), and HUF75345S3S (TO-263AB).
| Drain Current (Continuous) | 75 A |
|---|---|
| Drain to Source Voltage | 55 V |
| On Resistance (Typical) | 0.007 Ohm |
The device supports a continuous drain current of 75A.
The device is rated for a continuous drain current of 75A and a drain-to-source voltage of 55V.