Industrial

The Z04 series is a 4-amp triac suitable for general-purpose AC switching applications. They can be found in applications such as touch light dimmers, fan controllers, HID lamp ignitors. Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers.

The XC62G series is a highly precise, low power consumption positive voltage regulator manufactured using CMOS and laser trimming technologies. It achieves high output currents with low input-output voltage differentials. The series includes a high precision voltage reference, an error correction circuit, and an output driver with current limitation. It exhibits good transient responses and stable output even during load changes. It also has high ripple rejection ratios and can be used with low power supply noise. The CE input allows the output to be turned off, reducing power consumption. It is available in SOT-25 (150mW) and SOT-89-5 (500mW) packages.

This document describes the features and characteristics of the HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S N-Channel UltraFET Power MOSFETs produced by Fairchild Semiconductor Corporation. It has advantages such as low on-resistance, high energy withstand capability, low reverse recovery time, and stored charge, making it suitable for applications where power efficiency is important.

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75343.

This is a 75A, 55V, 0.012 Ohm, N-channel UltraFET power MOSFET. It is manufactured using an advanced process technology that achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

This is a 75A, 55V, 0.014 Ohm N-Channel UltraFET Power MOSFETs manufactured using innovative UltraFET™ process with very low reverse recovery time and stored charge.

This document describes HUF75333G3, HUF75333P3, and HUF75333S3S, which are 66A, 55V, 0.016 Ohm N-Channel UltraFET Power MOSFETs. These devices are manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area and delivers outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

This is a 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs, manufactured using innovative UltraFET™ process, with very low reverse recovery time and stored charge, suitable for power efficiency-critical applications, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches and power management in portable and battery-operated products.

HUF75329G3, HUF75329P3, HUF75329S3S 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process by Intersil Corporation. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

This document introduces HUF75329D3 and HUF75329D3S, two 20A, 55V, 0.026 Ohm N-Channel UltraFET power MOSFETs. These devices are manufactured using the innovative UltraFET process, achieving the lowest possible on-resistance per silicon area and delivering outstanding performance. They can withstand high energy in avalanche mode and have very low reverse recovery time and stored charge in the diode. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

This document describes the features and characteristics of HUF75321P3 and HUF75321S3S, two N-Channel UltraFET power MOSFET devices. These devices are manufactured using the advanced UltraFET process, which results in the lowest possible on-resistance per silicon area and outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.