This document introduces a product called HUF75631P3, which is a N-channel power MOSFET with ultra-low on-resistance. The product features ultra-low on-resistance and high performance, making it suitable for various applications.
The document is a technical datasheet for the Intersil HUF75631P3, an N-channel UltraFET Power MOSFET packaged in TO-220AB. Key electrical characteristics include a continuous drain current of 33A at 25°C and a maximum drain-to-source voltage of 100V. The device features a typical on-resistance (RDS(ON)) of 0.040 Ohms.
| Operating Temperature Range | -55 to 175 °C |
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The device operates and stores within a temperature range of -55 to 175 °C.