HUF75623P3, HUF75623S3ST are 22A, 100V, 0.064 Ohm, N-Channel, UltraFET® Power MOSFETs products produced by Fairchild Semiconductor Corporation. They have an ultra low on-resistance (rDS(ON) = 0.064Ω, VGS = 10V) and can be used in various circuit designs.
The document provides a comprehensive overview of the HUF75623P3 and HUF75623S3ST N-channel UltraFET Power MOSFETs. Key features include an ultra-low on-resistance (RDS(ON)) of 0.064 Ohms at VGS = 10V, a continuous drain current capability of up to 22A at 25°C, and availability in JEDEC TO-220AB and TO-263AB packages.
The datasheet includes absolute maximum ratings, electrical specifications for off-state, on-state, switching, gate charge, and capacitance parameters. It also presents typical performance curves such as normalized power dissipation versus case temperature, peak current capability, forward bias safe operating area, and unclamped inductive switching capability.
| Drain to Source Voltage | 100 V |
|---|---|
| On-Resistance RDS(ON) | 0.064 Ohm |
| Power Dissipation | 85 W |
| Operating Temperature Range | -55 to 175 °C |
| Thermal Resistance Junction-to-Case (TO-220) | 1.76 C/W |
The typical on-resistance (RDS(ON)) is 0.064 Ohms at a gate-source voltage of 10V.
The maximum power dissipation is rated at 85 W.