This document introduces a N-channel ultra-low on-resistance power MOSFET device named HUF75631SK8. It features a simulation model with ultra-low on-resistance and temperature compensation, as well as simulation and thermal impedance models. The device has a peak current of 5.5A and a drain-to-source voltage of 100V.
The document is a technical data sheet for the Intersil HUF75631SK8, an N-channel UltraFET Power MOSFET packaged in JEDEC MS-012AA. Key electrical characteristics include a drain-to-source breakdown voltage of 100V and a continuous drain current of 5.5A at 25°C.
The datasheet details absolute maximum ratings, electrical specifications for off-state and on-state conditions, switching parameters, gate charge, capacitance, and source-to-drain diode characteristics. It also includes typical performance curves illustrating power dissipation, thermal impedance versus mounting pad area, and safe operating areas.
| Drain Current (Continuous) | 5.5 A |
|---|---|
| On-Resistance | 0.039 Ohm |
| Package Type | MS-012AA |
The maximum continuous drain current is 5.5 A when Ta= 25°C and Vgs = 10V.
The device uses the JEDEC MS-012AA package.