The HUF75631P3, HUF75631S3ST 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs have ultra low on-resistance, temperature compensated PSPICE® and SABER™ electrical models, Spice and SABER thermal impedance models.
The document provides technical data for the HUF75631P3 (TO-220AB) and HUF75631S3ST (TO-263AB) N-channel UltraFET power MOSFETs. Key features include a typical drain-to-source on-resistance of 0.040 Ohms at 33A continuous current, a maximum drain voltage of 100V, and an ultra-low package profile suitable for high-density applications.
The datasheet includes absolute maximum ratings, electrical specifications such as switching times and gate charge values, typical performance curves illustrating thermal impedance and safe operating areas, and PSPICE simulation models for circuit design verification.
| On-Resistance (Typical) | 0.040 Ohm |
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The maximum power dissipation rating for this part is 120 W.
The leads can be soldered at a maximum temperature of 300°C for 10 seconds.