This document introduces a product named HUF75531SK8, which is a 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET. The product features ultra-low on-resistance, temperature-compensated PSPICE and SABER electrical models, as well as Spice and SABER thermal impedance models. The document also includes packaging symbols, peak current vs pulse width curve, and UIS rating curve of the product.
The document is a technical datasheet for the HUF75531SK8, an N-channel UltraFET Power MOSFET manufactured by Intersil. It features an ultra-low on-resistance of 0.030 Ohms and is packaged in JEDEC MS-012AA (SOP-8). The device is designed for applications requiring high voltage handling up to 80V and continuous drain currents of 6A at 25°C.
The datasheet details absolute maximum ratings, electrical specifications including off-state breakdown voltage and on-resistance, switching parameters, and gate charge characteristics. It also includes typical performance curves illustrating power dissipation, current capability, thermal impedance relative to copper pad area, and saturation characteristics.
| On-Resistance (Rds(on)) | 0.030 Ohms |
|---|---|
| Operating Temperature Range | -55 to 150 °C |
| Package Type | JEDEC MS-012AA |
The device can operate with a maximum junction temperature of 150°C.
The device supports a continuous drain current of 6 A when the ambient temperature is 25°C and Vgs is 10V.
The normalized drain to source on resistance increases as the junction temperature rises from -80°C to 160°C.
The absolute maximum rating for power dissipation is 2.5 W under specified conditions.