This document describes the features and characteristics of the HUF75531SK8 product from Fairchild Semiconductor Corporation, including ultra-low on-resistance, temperature-compensated electrical models, pulse width curve, and UIS rating curve.
The document is a datasheet for the HUF75531SK8, an N-Channel UltraFET Power MOSFET manufactured by Fairchild Semiconductor. It features an on-resistance (RDS(ON)) of 0.030 Ohms and is packaged in the JEDEC MS-012AA format. The device is rated for a drain current of 6A at 25°C and 4A at 100°C, with a maximum drain-to-source voltage of 80V.
| Drain to Source Voltage | 80 V |
|---|---|
| On-Resistance | 0.030 Ohm |
| Power Dissipation | 2.5 W |
| Package | MS-012AA |
The maximum rated power dissipation for this component is 2.5 W.