This document describes the features of Fairchild Semiconductor Corporation's HUF75617D3 and HUF75617D3S UltraFET® Power MOSFETs, including ultra-low on-resistance, simulation models, peak current vs pulse width curve, UIS rating curve, etc.
This document is a semiconductor datasheet for the HUF75617D3 and HUF75617D3S N-Channel UltraFET Power MOSFETs. The devices are available in JEDEC TO-251AA and TO-252AA packages, respectively, and feature an ultra-low on-resistance of 0.090 Ohms. They are designed for applications requiring high current handling and robust performance.
| On-Resistance | 0.090 Ohm |
|---|