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This document describes the features and characteristics of Silicon Storage Technology's SST39LF/VF200A/400A/800A series products, including organization, voltage requirements, reliability, low power consumption, erase and programming speed, etc.
HUF76105DK8 is a low on-resistance (RDS(ON) = 0.050 Ω) N-channel power MOSFET from Intersil Corporation. It has a working voltage of 30V and a maximum current of 5A. This device is suitable for applications that require high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches and power management in portable and battery operated products.
This document introduces HUF76013P3 and HUF76013D3S, two 20A, 20V, 0.022 Ohm N-channel logic level power MOSFETs. These devices are optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance result in lower driver and switching losses, thereby increasing the overall system efficiency.
HUF76009P3, HUF76009D3S 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs is a low gate charge, low input capacitance, high switching speed MOSFET designed for use as the upper switch in synchronous buck applications.
This data sheet provides detailed information on the 128K x 8 CMOS page mode EEPROM SST29EE010, SST29LE010, SST29VE010, including features, performance parameters, and package sizes.
This document describes the features and characteristics of the UltraFET® power MOSFETs, HUF75925P3 and HUF75925D3ST, produced by Fairchild Semiconductor Corporation. It includes ultra-low on-resistance, simulation models, peak current vs pulse width curve, and UIS rating curve.
HUF75852G3 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET is a power MOSFET with ultra-low on-resistance. It has a gate-source voltage of 10V and a drain-source voltage of 150V. Its rated current is 75A.
HUF75842P3, HUF75842S3S 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET feature ultra low on-resistance (rDS(ON) = 0.042Ω, VGS = 10V), temperature compensated PSPICE® and SABER™ electrical models, Spice and SABER thermal impedance models, and are available for download.
HUF75831SK8 is a Fairchild Semiconductor Corporation's N-channel ultra-low-resistance power MOSFET with a maximum on-resistance of 0.095 ohms and a maximum voltage of 150 volts.
HUF75831SK8 is a N-channel UltraFET Power MOSFET produced by Intersil Corporation. Its maximum on-resistance is 0.095 ohms, the maximum drain-source voltage is 150V, and the maximum gate-source voltage is 150V.
HUF75829D3, HUF75829D3S 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET is a power transistor produced by Intersil Corporation. It has the characteristics of ultra-low on-resistance, fast response and low conduction resistance. It is suitable for various power electronic applications.
SVR1118 Series is a low dropout linear voltage regulator with a 150 ° C operating temperature, a 600 μA static current, a 1 V dropout voltage, a fast settling time, high reliability, and customizable lead forms.
