This data sheet provides detailed information on the 128K x 8 CMOS page mode EEPROM SST29EE010, SST29LE010, SST29VE010, including features, performance parameters, and package sizes.
This document is a technical datasheet for the SST29EE010, SST29LE010, and SST29VE010 family of 1 Megabit (128K x 8) CMOS page mode EEPROMs. Manufactured using Silicon Storage Technology's proprietary SuperFlash technology, these devices offer single-voltage read and write operations tailored to specific supply voltages: 5.0V for the EE010, 3.0V for the LE010, and 2.7V for the VE010.
| Memory Capacity | 1 Megabit (128K x 8) |
|---|---|
| Endurance | 100,000 Cycles (typical) |
| Data Retention | Greater than 100 years |
| Active Current (5V) | 20 mA (typical) |
| Standby Current | 10 uA (typical) |
| Page-Write Cycle Time | 5 ms (typical) |
| Complete Memory Rewrite Time | 5 sec (typical) |
| Effective Byte-write Cycle Time | 39 us (typical) |
| Read Access Time (5V) | 90 and 120 ns |
The SST29EE010 requires 5.0V, the SST29LE010 requires 3.0V, and the SST29VE010 requires 2.7V.
The typical page-write cycle time is 5 ms.
The device has a guaranteed endurance of 100,000 cycles.