Industrial

FDS3601 is a 1.3A, 100V N-Channel MOSFET from Fairchild Semiconductor Corporation. It features fast switching speed, low gate charge and high performance trench technology, making it ideal for use in DC/DC converters.

This document describes the features and characteristics of the BZX284 series voltage regulator diodes, including total power dissipation, tolerance range, and working voltage range.

HUF76139P3/S3S is an N-Channel logic level power MOSFET manufactured by Intersil with 75A, 30V, 0.0075 Ohm performance, suitable for applications requiring high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches and power management in portable and battery-operated products

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76137.

This product is a N-channel power MOSFET manufactured using the innovative UltraFET™ process. It has the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

This document describes the features and characteristics of HUF76132P3 and HUF76132S3S N-Channel power MOSFETs. These products are manufactured using the innovative UltraFET™ process, achieving low on-resistance, high energy tolerance in avalanche mode, and low reverse recovery time. They are suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

This document is the technical manual of HUF76131SK8 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET, introducing the features and characteristics of this product.

This is an N-Channel power MOSFET, manufactured using the innovative UltraFET™ process, with the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

HUF76121SK8 is an N-channel power MOSFET manufactured by Intersil using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery- operated products. Formerly developmental type TA76121.

HUF76121P3, HUF76121S3S 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs High performance 47A N-channel ultra low-resistance logic level MOSFETs

This document describes the features and characteristics of the HUF76121P3 and HUF76121S3S products. These products are N-channel power MOSFETs manufactured using the innovative UltraFET™ process. They have high energy withstand capability in avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

The ST1S03 is a step-down DC-DC converter optimized for powering low-voltage digital core in HDD applications and, generally, to replace the high current linear solution when the power dissipation may cause an high heating of the application environment. It provides up to 1.5A over an input voltage range of 3V to 16V. An high switching frequency (1.5MHz) allows the use of tiny surface-mount components: as well as the resistor divider to set the output voltage value, only an inductor, a schottky diode and two capacitors are required. Besides, a low output ripple is guaranteed by the current mode PWM topology and by the use of low E.S.R. SMD ceramic capacitors. The device is thermal protected and current limited to prevent damages due to accidental short circuit. The ST1S03 is available in DFN6 package.

This is a product datasheet, which introduces the features and characteristics of SST39LF200A/400A/800A.