This document introduces HUF76013P3 and HUF76013D3S, two 20A, 20V, 0.022 Ohm N-channel logic level power MOSFETs. These devices are optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance result in lower driver and switching losses, thereby increasing the overall system efficiency.
The document provides technical specifications for the HUF76013 series of N-Channel Logic Level Power MOSFETs. These devices are specifically optimized for use as the upper switch in synchronous buck converter applications, featuring low gate charge and low input capacitance to improve system efficiency.
Key electrical characteristics include a drain-to-source voltage rating of 20V, a continuous drain current of 20A at 25°C, and an on-resistance (RDS(ON)) of 0.022 Ohms with VGS = 10V. The datasheet details absolute maximum ratings, electrical specifications for both off-state and on-state conditions, switching parameters, capacitance values, and source-to-drain diode characteristics.
| On-Resistance (RDS(ON)) @ VGS=10V | 0.022 Ohm |
|---|---|
| Total Gate Charge (Qg) | 14 nC (Typ) |
| Input Capacitance (Ciss) | 624 pF (Typ) |
| Power Dissipation | 50 W |
| Operating Temperature Range | -55 to 150 °C |
They are optimized for switching when used as the upper switch in synchronous buck applications.
The devices are available in JEDEC TO-252AA (HUF76013D3S) and JEDEC TO-220AB (HUF76013P3) packages.
Yes, adding the suffix T to the part number obtains the device in tape and reel.