This document describes the features and characteristics of the UltraFET® power MOSFETs, HUF75925P3 and HUF75925D3ST, produced by Fairchild Semiconductor Corporation. It includes ultra-low on-resistance, simulation models, peak current vs pulse width curve, and UIS rating curve.
The document is a technical data sheet for the HUF75925P3 (TO-220AB package) and HUF75925D3ST (TO-252AA package) N-Channel UltraFET Power MOSFETs. These devices feature an ultra-low on-resistance of 0.275 Ohm, a drain current capability of 11A continuous at 25°C, and a maximum drain-to-source voltage rating of 200V.
The datasheet includes absolute maximum ratings, detailed electrical specifications for off-state, on-state, switching, gate charge, and capacitance parameters. It also provides typical performance curves illustrating power dissipation, current capability, thermal impedance, and safe operating areas under various conditions.
| Thermal Resistance Junction-to-Case (TO-220) | 15 CW |
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