HUF75831SK8 is a N-channel UltraFET Power MOSFET produced by Intersil Corporation. Its maximum on-resistance is 0.095 ohms, the maximum drain-source voltage is 150V, and the maximum gate-source voltage is 150V.
The document is a technical datasheet for the Intersil HUF75831SK8, an N-Channel UltraFET Power MOSFET. It specifies key electrical characteristics including a maximum drain-to-source voltage of 150V, a continuous drain current of 3A at 25°C, and an on-resistance (RDS(ON)) of 0.095 Ohms. The device is packaged in the JEDEC MS-012AA format.
| Package Type | JEDEC MS-012AA |
|---|
Add the suffix T to the part number, for example HUF75831SK8T.
The maximum continuous drain current is 3 A when the ambient temperature is 25°C.
The maximum power dissipation is 2.5 W.