HUF75831SK8 is a Fairchild Semiconductor Corporation's N-channel ultra-low-resistance power MOSFET with a maximum on-resistance of 0.095 ohms and a maximum voltage of 150 volts.
The document is a technical data sheet for the HUF75831SK8, an N-channel UltraFET power MOSFET. Key features include a typical on-resistance of 0.095 Ohms at Vgs=10V and it is packaged in JEDEC MS-012AA format.
The datasheet details absolute maximum ratings such as a drain-to-source voltage of 150V and continuous drain current up to 3A. It also provides comprehensive electrical specifications for off-state, on-state, switching, gate charge, and capacitance parameters along with typical performance curves.
| Continuous Drain Current (Ta=25°C) | 3 A |
|---|---|
| Power Dissipation | 25 W |
| Drain to Source On Resistance (Typical) | 0.095 Ohm |
| Package Type | JEDEC MS-012AA |
The maximum continuous drain current is 3 A when the ambient temperature is 25°C.
The maximum power dissipation is 25 W.
The maximum temperature for soldering leads is 300 °C for 10 seconds.