HUF75939P3, HUF75939S3ST 22A, 200V, 0.125 Ohm, N-Channel, UltraFET® Power MOSFET, features Ultra Low On-Resistance rDS(ON) = 0.125Ω, Temperature Compensated PSPICE® and SABER© Electrical Models, Spice and SABER© Thermal Impedance Models
This document is a semiconductor datasheet for the HUF75939P3 and HUF75939S3ST N-Channel UltraFET Power MOSFETs. The devices are available in JEDEC TO-220AB and TO-263AB packages, respectively, and feature an ultra-low on-resistance of 0.125 Ohm with a drain current capability of 22A at 25°C.
The datasheet details absolute maximum ratings, electrical specifications including off-state and on-state parameters, thermal characteristics, and switching specifications. It also includes typical performance curves for power dissipation, current capability, and capacitance, along with PSPICE electrical models for circuit simulation.
| Drain Current (Continuous) | 22 A |
|---|---|
| On-Resistance | 0.125 Ohm |
| Thermal Resistance Junction to Case | 0.83 °C/W |
| Package Types | TO-220AB, TO-263AB |
The device operates and stores within a temperature range of -55 to 175 °C.