Industrial

ASI UML1SL is a NPN Silicon RF Power Transistor produced by Advanced Semiconductor Inc. Its maximum current is 2.0 A, maximum collector-emitter reverse voltage is 45 V, maximum emitter-collector reverse voltage is 25 V, and maximum emitter-base reverse voltage is 3.5 V.

UML1 is a NPN silicon RF power transistor with the following features: Omnigold™ Metalization System, maximum current 2.0A, maximum voltage 45V, maximum power 31.8W, package type 4L STUD

74ABT00 Quad 2-input NAND gate datasheet, including pin definition, logic symbol, function table, package information, etc.

This document describes the features and characteristics of the 74ABT16244A and 74ABTH16244A 16-bit buffer/line drivers (3-State).

This is an English datasheet for ASI ULBM2, which introduces the features and characteristics of the product, including BVCEO, BVCES, BVCBO, VEBO, ICBO, hFE, Cob, PG, ηηC, IC, VCBO, VCEO, VCES, VEBO, PDISS, TJ, TSTG, θθJC.

This document is a technical datasheet of ASI ULBM2T, which introduces the features and characteristics of the product, including maximum rated current, maximum rated voltage, maximum rated power, etc.

This document is about the ULBM2SL product, including product features, characteristics and parameters.

This document describes the features and characteristics of the ASI ULBM2TE model, including maximum operating current, maximum operating voltage, maximum power dissipation, etc.

This document is a product datasheet for the ASI ULBM5 model, describing its features and characteristics, such as maximum operating current, maximum operating voltage, maximum power dissipation, etc.

The document describes the features and characteristics of the ASI ULBM5SL product, including maximum operating current, maximum operating voltage, and maximum power dissipation.

The ASI ULBM10 is a NPN silicon RF power transistor designed for Omnigold™ Metalization System, with maximum current IC of 2.5A, maximum collector-base reverse voltage VCBO of 36V, maximum collector-emitter open voltage VCEO of 16V, maximum collector-emitter reverse voltage VCES of 36V, maximum emitter-base reverse voltage VEBO of 4.0V, maximum power dissipation PDISS of 58W, operating temperature range of TJ-65℃ to +200℃, storage temperature range of TSTG-65℃ to +150℃, and thermal resistance θθJC of 7.0℃/W.

This datasheet is about the specifications of ASI ULBM35, including BVCEO IC, BVCES IC, BVEBO IE, ICES VCE, hFE VCE, Cob VCB, PG, ηηC, IC, VCBO, VCEO, VEBO, PDISS, TJ, TSTG, θθJC

This datasheet provides the characteristics of ASI ULBM45, including rated current, voltage and power.

This is a datasheet of ASI ULBM0.5, which introduces its features and characteristics including BVCEO, BVCES, BVEBO, hFE, Cob, PG, etc.