Industrial

This is the PDF datasheet of ASI UML1T.

This document is the specification of ASI UML3, which introduces the features and characteristics of the product.

The ASI UML5 is a NPN silicon RF power transistor designed for high frequency power applications. It features the Omnigold™ metalization system, has a maximum current of 10 A, a maximum voltage of 60 V and 35 V, a maximum power dissipation of 140 W, and a junction temperature range of -65°C to +200°C.

This document describes the characteristics and performance parameters of the ASI UML15 NPN silicon RF power transistor.

This is a datasheet for the UML25F power transistor produced by A D V A N C E D S E M I C O N D U C T O R, I N C. The transistor has a BVCBO of 65 V, a BVCES of 65 V, a BVCEO of 35 V, a BVEBO of 4.0 V, an ICBO of 1.0 mA, a hFE of 5.0, a Cob of 30 pF, a PG of 10 and a ηηD of 60 dB.

The ASI UML70 is a NPN silicon RF power transistor designed for high power applications. It features an internal input matching network and the Omnigold™ metalization system. The maximum current rating is 8.0A, the maximum voltage rating is 60V, and the maximum power dissipation rating is 140W.

UML100 is a high power NPN silicon RF power transistor designed for high power class C amplifiers in 225 to 400 MHz military communication equipment.

The VFT150-28 is an N-channel enhancement mode VHF power MOSFET with a maximum current rating of 16A, a maximum voltage rating of 65V, and a maximum power rating of 300W. This device features the Omnigold™ metalization system and has a 10:1 load VSWR capability and 10dB typical gain.

VFT5-28SL is a N-channel enhancement mode VHF power MOSFET designed for Class A and AB VHF power amplifiers operating at frequencies up to 250 MHz.

The VFT15-28 is a N-channel enhancement mode MOSFET designed for general purpose Class B power amplifier applications up to 175 MHz.

The document describes the VFT30-28, a gold metallized N-Channel enhancement mode MOSFET, intended for use in 28VDC large signal applications up to 400MHz.

The VFT80-28 is an N-channel enhancement mode VHF power MOSFET designed for general purpose Class B power amplifier applications up to 175 MHz. The device features PG = 10 dB typical at 175 MHz and 30:1 load VSWR capability.

VFT80-28 is a N-channel enhancement mode VHF power MOSFET, with a rated voltage of 60 V and a rated current of 10 A. Features 10:1 load VSWR capability and Omnigold™ metallization system.

The VFT300-28 is a N-channel enhancement mode silicon VHF power MOSFET designed for wideband high power VHF amplifier applications operating up to 250 MHz.