Industrial

IXFH20N80Q and IXFK20N80Q are IXYS's N-channel enhancement mode avalanche rated, low Qg, high dv/dt power MOSFETs. The main features are low RDS (on) low Qg, avalanche energy and current rated, fast intrinsic rectifier, easy to mount, space saving, high power density.

This datasheet lists the maximum ratings, characteristic values, etc. of the IXFH type MOSFET device.

IXFH 13N80 is a N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Power MOSFET

IXFH 140N10P is a N-Channel Enhancement Mode Fast Intrinsic Diode, Avalanche Rated from IXYS with Unclamped Inductive Switching (UIS) rated, Low package inductance - easy to drive and to protect.

The document describes the features and characteristics of IXYS' N-channel enhancement mode MOSFET products, including maximum ratings, maximum operating temperature, maximum current, etc.

This document introduces the HiPerFETTM power MOSFET products from IXYS. The product features a double metal process for low gate resistance, international standard packages, and epoxy that meets UL 94 V-0 flammability classification. Additionally, the product has low RDS(on), low Qg, and is rated for voltage and current avalanche. It is suitable for various applications such as DC-DC converters, switched-mode and resonant-mode power supplies, and DC choppers.

This datasheet provides information about IXFH 15N100Q, including maximum ratings, characteristic values, symbols, and packages.

14N80 and 15N80 are N-Channel Enhancement Mode high dv/dt, low trr, HDMOSTM family power MOSFETs produced by IXYS company. Their features include international standard packages, low RDS (on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance, easy to drive and protect, fast intrinsic rectifier, applied to DC-DC converters, synchronous rectifiers, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor control, temperature and lighting controls, low voltage relays.

The document describes IXYS' high-power MOSFET products, including features and characteristics such as low RDS(on), easy mounting, space savings, high power density, etc.

This data sheet lists the maximum ratings, characteristic values, package information, etc. of HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) TO-204 AA (IXFM).

IXFH/IXFM 11N80 and 13N80 are IXYS's high voltage N-channel enhancement mode power MOSFETs, with low RDS(on), high dv/dt and low trr characteristics, and TO-247 and TO-204 packages.

This document describes the features and characteristics of IXYS' HiPerRFTM Power MOSFETs, including RF capability, low gate resistance, avalanche rating, low package inductance, etc.

This document is about the HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching product of IXYS company. This product has the characteristics of Low Qg, Low Intrinsic Rg, Low trr.

This document mainly introduces the maximum ratings, characteristic values, packages, and application scenarios of the IXFH and IXFM series products.

The document describes the features and characteristics of the N-channel enhancement mode high dv/dt, low trr, HDMOSTM family products manufactured by IXYS. The products have features such as low RDS(on), high voltage tolerance, and rugged structure. They are suitable for applications such as DC-DC converters, uninterruptible power supplies, battery chargers, switched-mode and resonant-mode power supplies.