This document mainly introduces the maximum ratings, characteristic values, packages, and application scenarios of the IXFH and IXFM series products.
This datasheet covers the IXYS HDMOSTM Family, which includes the IXFH (TO-247 AD) and IXFM (TO-204 AA) series of N-channel enhancement mode power MOSFETs. These devices feature a low RDS(on), rugged polysilicon gate cell structure, and are designed for unclamped inductive switching (UIS). The document provides maximum ratings, electrical characteristics, and package outlines.
| Drain-Source Breakdown Voltage (VDS) | 1000 V |
|---|---|
| Continuous Drain Current (ID) | 10 A, 12 A, or 12.5 A |
| Package Types | TO-247 AD (IXFH) and TO-204 AA (IXFM) |
| Operating Junction Temperature Range | -55 to +150 °C |
The typical reverse recovery time is 250 ns at TJ = 25°C.
The maximum continuous drain current for the 10N100 model is 10 A at 25°C.