Industrial

This is a technical introduction to IDT's MIPS-IV processor, providing the features and characteristics of the processor.

IDT2305 is a high-precision clock buffer from IDT company, which supports 10MHz to 133MHz frequency and has 5 output ports. It has zero delay output and the output clock jitter is less than 200ps.

IDT2308 is a 3.3V zero delay clock multiplier that can be used for applications with frequencies ranging from 10MHz to 133MHz. The IDT2308 distributes one clock input to two four-output arrays and provides independent output enable for each output array. The external feedback (FBK) pin is used to synchronize the outputs to the clock input. The output skew is less than 200 ps and the cycle-to-cycle jitter is less than 200 ps. IDT2308 provides 1x, 2x, 4x output options, which can be selected according to needs. IDT2308 does not require an external RC network, operates at 3.3V, and is available in TSSOP and SOIC packages.

This document is the datasheet of the N-Channel Power MOSFET of IXFX brand PLUS 247TM.

IXFK33N50 / IXFK35N50 MOSFET is a high performance power device produced by IXYS. It adopts international standard package, and has the characteristics of low RDS(on), high power density and easy to install.

This document describes the features and characteristics of the HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode products produced by IXYS in 2004. These features include low gate resistance, international standard packages, UL 94 V-0 flammability classification, etc. In addition, the product has advantages such as avalanche energy and current rating, and fast intrinsic rectifier.

PLUS 247TM is a single MOSFET die with low Qg, low trr and high-frequency switching performance. Applications include DC-DC converters, battery chargers, and switched-mode power supplies.

This document is the datasheet of IXFK 26N60Q IX N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Power MOSFETs. Its main features include low gate charge, international standard packages, epoxy meet UL 94 V-0, flammability classification, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure, avalanche energy and current rated, fast intrinsic Rectifier etc.

This document is the Datasheet of IXYS's 25N80/27N80 MOSFET, which mainly introduces the characteristics and features of the MOSFET, application scenarios and advantages.

The document describes the HiPerFETTM power MOSFETs of IXYS company, including the PLUS 247TM (IXFX) and TO-264 AA (IXFK) models. These products feature low Qg, high dV/dt, and low trr.

This document describes the features and characteristics of IXYS Corporation's products, including international standard packaging, low RDS(on), and high voltage performance.

IXFH 7 N80 and IXFM 7 N80 are N-channel enhancement mode power MOSFETs from IXYS with high dv/dt, low trr and high power density. They are suitable for DC-DC converters, synchronous rectifiers, battery chargers, switched-mode power supplies and other applications.

IXFH 7N90Q is a N-channel enhancement mode MOSFET produced by IXYS company, with low Qg and high dv/dt features.

This document is the datasheet of IXFK series high voltage power MOSFETs, which provides the features and characteristics of this series products, including package, maximum voltage, maximum current, maximum power and maximum switching speed.