Industrial

This datasheet provides information on the IXYSEPLUS264TM(IXFB) product, including maximum ratings, characteristic values, features, applications, and advantages.

This is the IXFC 15N80Q datasheet. IXFC 15N80Q is a Q-class N-channel enhancement mode avalanche rated, high dv/dt, low Qg HiPerFETTM ISOPLUS 220TM MOSFET. It has the following features: Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation - Low drain to tab capacitance(<35pF) - Low RDS (on) - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Fast intrinsic Rectifier. Applications include DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers and AC motor control. Advantages include easy assembly: no screws or isolation foils required - Space savings - High power density

The document describes the features and characteristics of IXYS products, including high power dissipation, isolated mounting surface, low drain to tab capacitance, and low on-resistance.

This document describes the features and characteristics of the IXFC52N30P model PolarHTTM HiPerFET power MOSFET product from IXYS. It features high power dissipation, isolated mounting surface, 2500V electrical isolation, and low drain to tab capacitance.

The document describes a N-Channel Enhancement Mode HiPerFETTM MOSFET product from IXYS. This product belongs to the HDMOSTM family and features high dv/dt, low trr. It uses a silicon chip on a Direct-Copper-Bond substrate, which allows for high power dissipation, isolated mounting surface, and 2500V electrical isolation. Additionally, the product has low drain to tab capacitance (<35pF), low RDS (on), and a rugged polysilicon gate cell structure.

This product is a N-channel enhancement mode avalanche rated, high dv/dt, low trr single die MOSFET with low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance and fast intrinsic rectifier features.

IXFE 80N50 is a low RDS(on) and high dv/dt N-Channel Enhancement Mode Avalanche Rated Power MOSFET. It features low RDS(on), rugged polysilicon gate cell structure, UIS rated, low package inductance and fast intrinsic rectifier.

ST3293 is a high-speed RS-422 transceiver from STMicroelectronics. It supports data rates up to 25Mbps and features a digitally programmable voltage amplifier. The device also supports short circuit current limiting and open circuit fault protection.

ST330C is a 650A phase control thyristor with a metal case and ceramic insulator. It is suitable for applications such as DC motor controls, controlled DC power supplies, and AC controllers.

This document describes the features and characteristics of the 720A phase control thyristors ST330C..C series, which are suitable for applications such as DC motor controls, controlled DC power supplies, and AC controllers.

This document describes the features and characteristics of the 650A PHASE CONTROL THYRISTORS Hockey Puk Version ST330C..L SERIES 1, as well as its typical applications and major ratings and characteristics.