This document is about the HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching product of IXYS company. This product has the characteristics of Low Qg, Low Intrinsic Rg, Low trr.
This document provides advanced technical information for the IXYS IXFH 12N50F and IXFT 12N50F power MOSFETs. These devices are designed as N-Channel Enhancement Mode transistors with F-Class MegaHertz switching performance, characterized by low gate resistance, low on-resistance (Rds(on)), and avalanche rating.
The datasheet details maximum ratings, electrical characteristics, and physical dimensions for both TO-247 and TO-264/TO-268 package styles. It highlights features such as Unclamped Inductive Switching (UIS) rating, low intrinsic rectifier recovery time, and suitability for high-frequency applications like DC-DC converters and RF amplifiers.
| Drain-Source Voltage (Vdss) | 500 V |
|---|---|
| Continuous Drain Current (Id) | 12 A |
| Gate-Source Threshold Voltage (Vgs(th)) | 3.0 V typ. |
| Input Capacitance (Ciss) | 1870 pF |
Yes, the IXFH 12N50F is described as Avalanche Rated.
The device can operate at temperatures up to 150°C.
The maximum power dissipation is 180 W at 25°C.