The document describes the features and characteristics of the N-channel enhancement mode high dv/dt, low trr, HDMOSTM family products manufactured by IXYS. The products have features such as low RDS(on), high voltage tolerance, and rugged structure. They are suitable for applications such as DC-DC converters, uninterruptible power supplies, battery chargers, switched-mode and resonant-mode power supplies.
This document is a datasheet for the IXYS IXFH 13N50 N-Channel Enhancement Mode Power MOSFET. It details the device's electrical characteristics, maximum ratings, and physical dimensions for the TO-247 package. The device utilizes the HiPerFET™ and HDMOS™ process families.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current | 13 A |
| Package Type | TO-247 |
| Operating Temperature Range | -55...+150 °C |
| Thermal Resistance Junction-to-Ambient | 180 °C/W |