Industrial

The PBSS2515YPN is a 15V low VCEsat NPN/PNP transistor. It features low collector-emitter saturation voltage, high current capability, replaces two SC-70 packaged low VCEsat transistors on the same PCB area, reduces required PCB area, and reduces pick and place costs.

PBSS2515VPN is a low Vcesat NPN/PNP dual transistor produced by PHILIPS, with a feature of low power consumption (300mW), small package (1.6x1.2mm), and can be used in switching, driving, backlighting, audio amplification and other occasions.

PBSS2515M is a 15V, 0.5A NPN low VCEsat (BISS) transistor with low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, reduced heat generation and reduced printed-circuit board requirements. Suitable for power management, peripheral driver and other applications.

This document describes the features and applications of the PBSS2515F 15V low VCEsat NPN transistor.

PBSS2515VS is a low VCEsat NPN double transistor produced by PHILIPS. It has 300mW total power dissipation, 1.6x1.2mm ultra thin package, excellent coplanarity, low collector-emitter saturation voltage, high current capability, improved thermal performance and flat lead.

This document describes the features and characteristics of the PESD5V2S18U ESD protection array, including 18-line uni-directional ESD protection, maximum peak reverse power, low clamping voltage, and low leakage current.

The PESD5V0S2BT is a low-capacitance bidirectional ESD protection diode in a SOT23 small plastic package designed to protect 2 data lines from the damage caused by Electro Static Discharge (ESD) and other transients.

The document describes a low capacitance 7-fold bidirectional ESD protection diode arrays designed to protect up to seven transmission or data lines from damage caused by ElectroStatic Discharge (ESD) and other transients.

This is a product datasheet of PESD5V0L6UAS; PESD5V0L6US Low capacitance 6-fold ESD protection diode arrays. The datasheet mainly introduces the features, applications, technical parameters and other information of the product.

This document describes a very low capacitance quadruple ESD protection diode array in an ultra small SOT665 plastic package, designed to protect up to four signal lines from damage caused by ESD and other transients. The features include: ESD protection for up to four lines, ultra low leakage current, very low diode capacitance, ESD protection up to 12 kV, low clamping voltage, etc.

This data sheet provides detailed information on the PESDxV4UG series of quad ultra-low capacitance ESD protection diode arrays in SOT353 package, which are designed to protect up to four signal lines from damage caused by ESD and other transients.

This document is the PESD3V3L5UY, PESD5V0L5UY low capacitance 5-fold ESD protection diode arrays specification, which mainly introduces the product features and characteristics, including unidirectional ESD protection, bidirectional ESD protection, low diode capacitance, maximum peak pulse power, low clamping voltage, ultra low leakage current, ESD protection, application scenarios and so on.

This document describes the features and characteristics of the PESD3V3L5UV and PESD5V0L5UV low capacitance 5-fold ESD protection diode arrays.

The PESDxL4UW series low capacitance quadruple ESD protection array is a very small SOT665 plastic surface mount package designed to protect up to four transmission or data lines from ElectroStatic Discharge (ESD) damage.

The PESDxL4UG series is a Philips Semiconductors low capacitance quadruple ESD protection diode array in SOT353 package. The product features uni-directional ESD protection, low diode capacitance, maximum peak pulse power, low clamping voltage, ultra low leakage current, ESD protection > 20 kV, etc. The product can be used in cellular handsets and accessories, portable electronics, computers and peripherals, communication systems, audio and video equipment, etc.