Industrial

PBSS5240V is a low Vcesat PNP transistor with high current capability and high efficiency, which can be used in power management and peripheral driver applications.

PBSS5240T is a 40 V, 2 A PNP low VCEsat (BISS) transistor from Philips Semiconductors. Product features are low collector-emitter saturation voltage, high current capability, reduced heat generation improved device reliability. It can be applied to supply line switching circuits, battery management applications, DC/DC converter applications, strobe flash units and heavy duty battery powered equipment (motor and lamp drivers).

This document describes the features and characteristics of the PBSS5230T, a 30V, 2A PNP low VCEsat (BISS) transistor. It includes low collector-emitter saturation voltage VCEsat, high collector current capability, higher efficiency leading to less heat generation, reduced printed-circuit board requirements, and cost-effective alternative to MOSFETs in specific applications.

PBSS5160T is a 60V, 1A PNP low VCEsat (BISS) transistor with low collector-emitter saturation voltage and high efficiency. It is suitable for power management and peripheral driver applications in automotive, telecom infrastructure, and industrial sectors.

PBSS5160DS is a 60V, 1A PNP low VCEsat (BISS) transistor with low collector-emitter saturation voltage VCEsat, high collector current capability, high collector current gain (hFE) and high efficiency.

PBSS5140V is a low VCEsat PNP transistor from Philips. The maximum power dissipation is 300 mW, and the package size is 1.6 mm × 1.2 mm × 0.55 mm. This transistor is suitable for general purpose switching and muting, LCD back lighting, supply line switching circuits and other applications.

This document describes the features and characteristics of the PBSS5140U 40 V low VCEsat PNP transistor, including low collector-emitter saturation voltage, high current capability, reduced heat generation, and the PNP low VCEsat transistor in a SOT323 (SC-70) plastic package.

PBSS5140T is a low Vcesat PNP transistor from Philips Semiconductors. It features low collector-emitter saturation voltage, high current capability and improved device reliability due to reduced heat generation. The transistor can be used for general purpose switching and muting, LCD backlighting, supply line switching circuits and battery-driven equipment (mobile phones, video cameras and hand-held devices).

PBSS5140S is a low voltage saturation voltage PNP transistor from Philips Semiconductors with high power dissipation (830 mW), ultra low collector-emitter saturation voltage, 1A continuous current, high current switching etc.

This document describes the features and applications of the PBSS5140D 40V low VCEsat PNP transistor.

The PBSS5120T is a PNP BISS transistor from Philips Semiconductors that provides ultra low VCEsat and RCEsat parameters. This transistor is suitable for power management, DC/DC conversion, supply line switching, battery charger, LCD backlighting and other applications.

This document presents the preliminary specification of an NPN medium power transistor, PBSS4540Z. The transistor features high current (max. 10A), low voltage (max. 40V), and low VCEsat. It is suitable for heavy-duty battery-powered equipment (automotive, telecom, and audio/video) as well as low supply voltage IC applications.

PBSS4540X is a high hFE and low VCEsat NPN low VCEsat transistor with high collector current capability (IC max 4A) and high efficiency, reducing heat generation. It is suitable for medium power peripheral drivers (such as fans and motors), DSC and mobile phone strobe flash units, TFT display inverter applications, LAN and ADSL system power switches, medium power DC-DC conversion and battery chargers.

PBSS4520X is a NPN low Vcesat (BISS) transistor produced by Philips Semiconductors. Its features are high hFE and low Vcesat, maximum current of 5A, high efficiency and low heat generation.