Industrial

PBSS4480X is a high hFE and low VCEsat NPN low VCEsat (BISS) transistor with high collector current capability and high efficiency. It is suitable for medium power peripheral drivers, strobe flash units, inverters, power switches, medium power DC-DC conversion and battery chargers.

This data sheet provides the characteristics, applications, description, pins, parameters and other information of 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X.

PBSS4320T is a 20V low VCEsat NPN transistor with features such as low collector-emitter saturation voltage VCEsat and corresponding low RCEsat, high collector current capability, high collector current gain, and improved efficiency due to reduced heat generation.

PBSS4320X is a low VCEsat (BISS) type of NPN transistor produced by Philips. Its features are SOT89 (SC-62) package, low saturation voltage, high efficiency, low heat generation, suitable for driving power converters, battery chargers, LCD backlights, etc.

PBSS4330X is a 30V, 3A NPN low VCEsat (BISS) transistor. It features low collector-emitter saturation voltage, high collector current capability, higher efficiency, and reduced printed-circuit board requirements.

PBSS4350D is an NPN transistor with high current capabilities and low VCEsat. It is suitable for heavy duty battery powered equipment (automotive, telecom, and audio/video) as well as VCEsat critical applications. It can be used in all battery driven equipment to save battery power.

This document is a product specification for PBSS4350S, a 50V low VCEsat NPN transistor. The transistor features high power dissipation, ultra low collector-emitter saturation voltage, 3A continuous current, and high current switching. It is suitable for medium power switching and muting, linear regulators, DC/DC converters, supply line switching circuits, battery management applications, strobe flash units, and heavy duty battery powered equipment.

This document describes the features and characteristics of the PBSS4350SA low VCEsat NPN transistor, including low collector-emitter saturation voltage VCEsat and corresponding equivalent resistance RCEsat, high collector current capability IC and ICM, high collector current gain hFE, and less heat generation leading to higher efficiency. This transistor is suitable for low and medium power DC/DC converters, low voltage regulation (LDO), MOSFET drivers, supply line switching, and battery chargers.

This document describes the features and characteristics of the PBSS4350T 50V low VCEsat NPN transistor, including low collector-emitter saturation voltage VCEsat and corresponding low equivalent on-resistance RCEsat, high collector current capability, high collector current gain, and improved efficiency due to reduced heat generation. The transistor is suitable for power management applications, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).

PBSS4240Y is a high-performance 40V low Vcesat NPN transistor. It features low collector-emitter saturation voltage, high current capability and enhanced performance. It is widely used in supply line switching circuits, battery management applications, DC/DC converter applications, strobe flash units and heavy duty battery powered equipment (motor and lamp drivers).

PBSS4240V is a low VCEsat and high current capability NPN transistor suitable for power management and peripheral driver applications.

PBSS4240T is a 40V low VCEsat NPN transistor with low collector-emitter saturation voltage, high current capability and improved device reliability. It can be used in supply line switching circuits, battery management applications, DC/DC converter applications, strobe flash units and heavy duty battery powered equipment (motor and lamp drivers).

PBSS4240DPN is a low VCEsat NPN/PNP transistor produced by Philips Semiconductors. It has the characteristics of low collector-emitter saturation voltage, high collector current capability, high collector current gain, high efficiency and so on. It is widely used in power management and peripheral driver applications.

PBSS4230T is a 30 V, 2 A NPN low VCEsat (BISS) transistor, features low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, reduced printed-circuit board requirements and cost effective alternative to MOSFETs in specific applications.