Industrial

This document describes the features and characteristics of the PBSS4160T, which is a 60V, 1A NPN low VCEsat (BISS) transistor.

This is a low Vcesat NPN transistor with the features of low power dissipation, small package, high current capability. The transistor is suitable for general purpose switching and muting, LCD backlighting, supply line switching circuits and battery driven equipment (such as mobile phones, video cameras and hand-held devices).

This document describes the features and characteristics of the PBSS3540M, a 40V, 0.5A PNP low VCEsat (BISS) transistor. It includes low collector-emitter saturation voltage, high collector current capability, high efficiency, and reduced printed-circuit board requirements. It is suitable for power management and peripheral driver applications.

PBSS4120T is a 20V, 1A NPN low VCEsat (BISS) transistor. It features low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency leading to less heat generation, reduced printed-circuit board requirements, and is a cost-effective alternative to MOSFETs in specific applications. It is suitable for power management, peripheral driver, etc.

PBSS4130T is a 30V, 1A NPN low VCEsat (BISS) transistor, featuring low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency, low heat generation, reduced printed-circuit board requirements and a cost effective alternative to MOSFETs in specific applications.

This datasheet introduces the features of PBSS4140DPN low Vcesat NPN/PNP transistor, including 600 mW total power dissipation, low collector-emitter saturation voltage, high current capability, etc.

pbss4140s is a low vcesat npn transistor launched by philips, which has the characteristics of high power dissipation, ultra low collector-emitter saturation voltage, 1a continuous current, high current switching, etc., and is widely used in medium power switching and muting, linear regulators, dc/dc converters, lcd backlighting, supply line switching circuits and other fields.

PBSS4140T is a low Vcesat NPN transistor with low heat generation, high current capability and improved reliability. It is widely used in switching, muting, LCD backlighting, power line switching circuits and various portable devices such as mobile phones and video cameras.

This document describes the features and characteristics of the PBSS4140U, a 40V low VCEsat NPN transistor. It includes low collector-emitter saturation voltage, high current capabilities, reduced heat generation, and improved device reliability. The transistor is suitable for general purpose switching and muting, LCD backlighting, supply line switching circuits, and battery driven equipment (mobile phones, video cameras, and hand-held devices).

PBSS3540F is a 40V low Vcesat PNP transistor that features low collector-emitter saturation voltage, high current capability, improved thermal behavior due to flat leads and enhanced performance over SOT23 general purpose transistors.

This document describes the features and characteristics of the PBSS3515VS 15V low VCEsat PNP double transistor, including 300 mW total power dissipation, ultra-thin package, low collector-emitter saturation voltage, high current capability, etc.

PBSS3515M is a 15 V, 0.5 A PNP low VCEsat (BISS) transistor produced by Philips Semiconductors

PBSS3515F is a 15V low VCEsat PNP transistor with low collector-emitter saturation voltage and high current capabilities. It is suitable for general purpose switching and muting, low frequency driver circuits, LCD backlighting, audio frequency general purpose amplifier applications, and battery driven equipment (mobile phones, video cameras and hand-held devices).

PBSS2540M is a 40V, 0.5A low voltage saturation NPN transistor with low collector-emitter saturation voltage VCEsat, high collector current capability IC and ICM, high efficiency leading to reduced heat generation and reduced printed-circuit board requirements. It is suitable for power management and peripheral driver applications.

This document describes the features and characteristics of the PBSS2540F, a 40V low VCEsat NPN transistor. It includes low collector-emitter saturation voltage, high current capability, improved thermal behavior due to flat leads, and enhanced performance over SOT23 general purpose transistors. Applications include general purpose switching and muting, low frequency driver circuits, audio frequency general purpose amplifier applications, and battery driven equipment (mobile phones, video cameras, hand-held devices).