Infineon BFG 135A NPN Silicon RF Transistor Datasheet

BFG 135A is a RF transistor produced by Texas Instruments (TI). It has an integrated emitter ballast resistor and a maximum current of 150mA. Its maximum power is 1W and its maximum frequency is 2GHz.

Brand: Infineon
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 6
File format: PDF
File size: 112 KB
Published: 06 July, 2012
Updated: 30 September, 2023
MD5 checksum: C159EB6E839E5BC6B974FBA8D7AEA4CD
PDF: Infineon BFG 135A NPN Silicon RF Transistor Datasheet PDF

About this manual

This document is a technical datasheet for the Infineon BFG 135A, an NPN silicon RF transistor designed for low-distortion broadband amplifier stages in antenna and telecommunication systems up to 2 GHz. It is also suitable for power amplifiers in DECT and PCN systems. The device features an integrated emitter ballast resistor and is available in a SOT-223 package.

What's inside

Maximum Ratings
Electrical Characteristics
DC characteristics
AC characteristics
Total power dissipation
Package
Pin Configuration

Specifications

Collector-emitter voltage (VcEO)	15 V

Frequently asked questions

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) is 15 V.

What are the minimum and maximum collector currents for this device?

The transistor operates at collector currents from a minimum of 70 mA to a maximum of 130 mA.

What is the typical DC current gain (hFE) at an emitter current of 100 mA?

The typical DC current gain is 120 when the collector current is 100 mA.

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