The document describes the Siemens BFT 12, an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO-119. It is intended for universal application in amplifiers up to the GHz range, such as broadband antenna amplifiers with high output power and linearity, and for oscillators.
The datasheet provides maximum ratings including collector-base voltage of 25 V and junction temperature of 150 °C. It lists static characteristics like current gain and dynamic characteristics including transition frequency up to 1.9 GHz, reverse transfer capacitance, and power gain at various frequencies.
| Collector-emitter voltage (Vceo) | 15 V |
|---|---|
| Emitter-base voltage (Vebo) | 3.5 V |
| Collector current (Ic) | 150 mA |
| Junction temperature (Tj) | 150 °C |