Industrial

BC807/BC808 is a PNP epitaxial silicon transistor suitable for AF driver stages and low power output stages. Its features include: collector-emitter voltage ranging from -45V to -25V, emitter-base voltage of -5V, maximum collector current of -800mA, maximum collector power dissipation of 310mW, etc.

The MJW21195/D is an Onsemi preferred device that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. The MJW21195/D features total harmonic distortion characterization, high dc current gain - hFE=20 Min@IC=8 Adc, excellent gain linearity, and high SOA: 2.25 A, 80 V, 1 second.

The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. They are characterized by low harmonic distortion, high DC current gain, excellent gain linearity, and high SOA capabilities.

MJW21191 and MJW21192 are bipolar power transistors manufactured by Motorola, specifically designed for power audio output or high power drivers in audio amplifiers.

The MJW18020 is a planar high voltage power transistor specifically designed for motor control applications, high power supplies, and UPS's. Its high reproducibility of DC and switching parameters minimizes dead time in bridge configurations. Key features include: high and excellent gain linearity, fast and very tight switching times (parameters tsi and tfi), very stable leakage current due to the planar structure, high reliability.

MJW16212 is a state-of-the-art SWITCHMODE bipolar power transistor. It has 1500 V collector-emitter breakdown capability, typical dynamic desaturation specified (new turn-off characteristic), application-specific state-of-the-art die design, fast switching (200 ns inductive fall time and 2000 ns inductive storage time), low saturation voltage (0.15 V at 5.5 A collector current and 2.5 A base drive), low collector-emitter leakage current (250 µA max at 1500 V VCES), high emitter-base breakdown capability (8.0 V min, for high voltage off drive circuits)

This is a technical datasheet for MJF16206 and MJW16206

MJ16110/MJW16110 is a bipolar power transistor launched by Motorola. Its maximum collector-emitter sustaining voltage is 400V, and its maximum collector-emitter breakdown voltage is 650V. This transistor is specially designed for half-bridge and full-bridge offline converters, and has good dynamic saturation characteristics and rugged RBSOA capability.

This data sheet provides the maximum ratings for the 1.5 kV SWITCHMODE series bipolar power transistors, including collector-emitter voltage, collector-emitter saturation voltage, emitter-base voltage, emitter-base saturation current, collector current, and emitter current.

This datasheet provides parameters of 1kV SWITCHMODE series bipolar power transistors, including reverse-biased SOA, switching times with inductive loads, saturation voltages, leakage currents, etc.

These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. • Switching Regulators • Fast Turn-Off Times – TC = 100°C • Inverters 50 ns Inductive Fall Time (Typ) • Solenoids 90 ns Inductive Crossover Time (Typ) • Relay Drivers 800 ns Inductive Storage Time (Typ) • Motor Controls • 100�C Performance Specified for: • Deflection Circuits Reverse-Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents

The MC10E404/100E404 is a 4-bit differential AND/NAND device. The differential operation of the device makes it ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were incorporated to minimize the skew between the upper and lower level gate inputs. Because a negative 2-input NAND function is equivalent to a 2-input OR function, the differential inputs and outputs of the device also allow for its use as a fully differential 2 input OR/NOR function. The output RISE/FALL times of this device are significantly faster than most other standard ECLinPS devices resulting in an increased bandwidth. The differential inputs have clamp structures which will force the Q output of a gate in an open input condition to go to a LOW state. Thus, inputs of unused gates can be left open and will not affect the operation of the rest of the device. Note that the input clamp will take affect only if both inputs fall 2.5V below VCC.

MC10E/100E337 is a 3-bit registered bus transceiver with scan.