Industrial

The NJL25V/28H000 series are small, high-performance receivers for infrared remote control systems. They can operate under low and wide supply voltage (2.7V to 5.5V). The NJL25V/28H000 series are metal case type with mesh window to improve EMI characteristic. Even under strong EMI noise condition such as TV, Air-conditioner, etc., NJL25V/28H000 series can work normally.

NJL21H/21V/22H/23H/24H000A series are small and high performance infrared remote control receivers, with wide and low supply voltage (2.7V to 5.5V), enhanced immunity against the disturbance light.

NJL3281D (NPN) NJL1302D (PNP) is a power transistor from ON Semiconductor. It features thermally matched bias diode, instant thermal bias tracking, absolute thermal integrity and high safe operating area.

NL27WZ00 is a high-performance dual 2-input NAND Gate operating from a 1.65V to 5.5V supply. It features extremely high speed, over voltage tolerant inputs, LVTTL and LVCMOS compatibility, and a near zero static supply current.

BC817 and BC818 are NPN silicon AF transistors, suitable for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. There are also complementary types BC807 and BC808 (PNP).

BC817UPN is a NPN/PNP Silicon Transistor Array, for AF input stages and driver applications, with high current gain, low collector-emitter saturation voltage, and two (galvanic) internal isolated NPN/PNP Transistors in one package.

BC817U is a NPN silicon transistor array designed for AF input stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and two internally isolated transistors with good matching in one package.

The BC817F is a NPN silicon transistor with high current, switching application, suitable for AF driver stage and low power output stage, and is a complementary pair of BC807F.

This document describes the features and characteristics of the BC817DS NPN general purpose double transistor, including high current, total power dissipation, and applications such as general purpose switching and amplification, push-pull amplifiers, and multi-phase stepper motor drivers.

BC817DPN is an NPN/PNP general purpose transistor with high current (500mA) and 600mW total power dissipation, which can replace two SOT23 packaged transistors in the same PCB area.

This document provides information about the maximum ratings, thermal characteristics, and electrical characteristics of Motorola's small-signal transistors, FETs, and diodes.

BC 817W / BC 818W are NPN Surface mount Si-Epitaxial PlanarTransistors with a maximum power dissipation of 225 mW and a plastic case SOT-323.

BC817W, BC818W are NPN silicon AF transistors for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. The complementary types are BC807W, BC808W (PNP).

BC817-16LT/D BC817-25LT1, BC817-40LT1 are NPN Silicon General Purpose Transistors with Pb-Free Packages. This document provides the maximum ratings, thermal characteristics, package dimensions, pinout, and ordering information for this transistor.

The data sheet provides information on the maximum ratings, thermal characteristics, and electrical characteristics of BC817-16LT1, BC817-25LT1, and BC817-40LT1.